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Lithographic patterning process and resist used in the process
Lithographic patterning process and resist used in the process
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机译:光刻图案化工艺及在工艺中使用的抗蚀剂
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摘要
A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.
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