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Semiconductor structure with through silicon via and method for fabricating and testing the same

机译:具有硅通孔的半导体结构及其制造和测试方法

摘要

A semiconductor structure with a through silicon via includes a substrate having a front side and a back side. The through silicon via penetrates the substrate. A device is disposed on the front side of the substrate. Numerous dielectric layers cover the front side. A first test pad for testing the device is disposed on the front side of the substrate. A second test pad for testing the through silicon via is disposed on the back side of the substrate. A method of fabricating and testing the semiconductor structure is also provided.
机译:具有硅穿孔的半导体结构包括具有正面和背面的衬底。硅通孔穿透衬底。装置设置在基板的正面上。许多介电层覆盖正面。用于测试该器件的第一测试垫设置在基板的正面上。用于测试硅通孔的第二测试垫设置在基板的背面。还提供一种制造和测试半导体结构的方法。

著录项

  • 公开/公告号US10685907B2

    专利类型

  • 公开/公告日2020-06-16

    原文格式PDF

  • 申请/专利权人 UNITED MICROELECTRONICS CORP.;

    申请/专利号US201916417589

  • 发明设计人 HSUEH-HAO SHIH;

    申请日2019-05-20

  • 分类号H01L23/48;H01L21/66;H01L23;

  • 国家 US

  • 入库时间 2022-08-21 11:31:33

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