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Semiconductor device and method for forming a low profile embedded wafer level ball grid array molded laser package (EWLB-MLP)

机译:用于形成薄型嵌入式晶片级球栅阵列模制激光封装(EWLB-MLP)的半导体器件和方法

摘要

A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An interconnect structure is formed over a first surface of the encapsulant. An opening is formed from a second surface of the encapsulant to the first surface of the encapsulant to expose a surface of the interconnect structure. A bump is formed recessed within the opening and disposed over the surface of the interconnect structure. A semiconductor package is provided. The semiconductor package is disposed over the second surface of the encapsulant and electrically connected to the bump. A plurality of interconnect structures is formed over the semiconductor package to electrically connect the semiconductor package to the bump. The semiconductor package includes a memory device. The semiconductor device includes a height less than 1 millimeter. The opening includes a tapered sidewall formed by laser direct ablation.
机译:半导体器件具有半导体管芯,该半导体管芯具有在半导体管芯上方和周围沉积的密封剂。互连结构形成在密封剂的第一表面上方。从密封剂的第二表面到密封剂的第一表面形成开口以暴露互连结构的表面。凸块形成为凹入开口内并布置在互连结构的表面上方。提供了一种半导体封装。半导体封装设置在密封剂的第二表面上方并且电连接至凸块。在半导体封装上方形成多个互连结构,以将半导体封装电连接至凸块。半导体封装包括存储器件。半导体器件包括小于1毫米的高度。该开口包括通过激光直接烧蚀形成的锥形侧壁。

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