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Dual-interferometry wafer thickness gauge

机译:双干涉晶片厚度计

摘要

A thickness measurement system may include an illumination source, a beam splitter to split illumination from the illumination source into two beams, a translation stage configured to translate a reference sample along a measurement direction, a first interferometer to generate a first interferogram between a first surface of a test sample and a first surface of the reference sample, and a second interferometer to generate a second interferogram between a second surface of the test sample and a second surface of the reference sample. A thickness measurement system may further include a controller to receive interference signals from the first and second interferometers as the translation stage scans the reference sample, and determine a thickness of the test sample based on the thickness of the reference sample and a distance travelled by the translation stage between peaks of envelopes of the interference signals.
机译:厚度测量系统可包括照明源,将来自照明源的照明分成两个光束的分束器,配置为沿测量方向平移参考样本的平移台,第一干涉仪以在第一表面之间生成第一干涉图测试样品和参考样品的第一表面的第一干涉,以及第二干涉仪,以在测试样品的第二表面和参考样品的第二表面之间产生第二干涉图。厚度测量系统可以进一步包括控制器,该控制器在平移台扫描参考样品时从第一和第二干涉仪接收干涉信号,并根据参考样品的厚度和样品行进的距离确定测试样品的厚度。干扰信号包络峰之间的平移级。

著录项

  • 公开/公告号US10782120B2

    专利类型

  • 公开/公告日2020-09-22

    原文格式PDF

  • 申请/专利权人 KLA-TENCOR CORPORATION;

    申请/专利号US201916447637

  • 发明设计人 AVNER SAFRANI;

    申请日2019-06-20

  • 分类号G01B11/24;G01B9/02;G01B11/06;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-21 11:30:29

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