Self-limiting liners for increasing contact trench volume in N-type and P-type transistors

摘要

Embodiments of the invention are directed to a method of forming a protective liner of a semiconductor device, wherein the method includes forming a source or a drain (S/D) region, forming a first layer of protective material over a top surface of the S/D region, and forming a second layer of protective material over the first layer of protective material, wherein the second layer of protective material includes an oxide of a first type of material. An anneal is applied to the first layer and the second layer to drive the first type of material into the first layer, drive a second type of material from the first layer into the second layer, and convert at least a portion of the second layer of protective material to an oxide of the second type of material, wherein the oxide of the second type of material is the protective liner.