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Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms
Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms
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机译:包含包含原子,Sn原子和Zn原子的氧化物的半导体膜
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摘要
A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
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机译:一种场效应晶体管,其包括:衬底,以及至少栅电极,栅绝缘膜,半导体层,用于半导体层的保护层,设置在衬底上的源电极和漏电极,其中,源电极和漏电极与它们之间的半导体层连接,栅绝缘膜在栅电极和半导体层之间,保护层在半导体层的至少一个表面上,半导体层包括包含In原子,Sn原子的氧化物Zn /(In + Sn + Zn)的原子组成比为25原子%以上且75原子%以下,Sn /(In + Sn + Zn)的原子组成比为50以下。原子%。
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