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Semiconductor device structure with gate spacer having protruding bottom portion and method for forming the same

机译：具有具有突出的底部的栅极间隔件的半导体器件结构及其形成方法

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摘要

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on the sidewall of the gate stack structure, and the gate spacers include a top portion and a bottom portion adjoined to the top portion, and the bottom portion slopes to a top surface of the substrate. The semiconductor device structure further includes an epitaxial structure formed adjacent to the gate spacers, and the epitaxial structure is formed below the gate spacers.

机译：提供了一种半导体器件结构及其形成方法。半导体器件结构包括衬底和形成在衬底上的栅极堆叠结构。半导体器件结构还包括形成在栅堆叠结构的侧壁上的栅间隔物，并且栅间隔物包括顶部和与顶部邻接的底部，并且该底部倾斜至基板的顶表面。半导体器件结构还包括与栅极间隔物相邻形成的外延结构，并且外延结构形成在栅极间隔物下方。

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公开/公告号US10522422B2

专利类型
公开/公告日2019-12-31

原文格式PDF
申请/专利权人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;
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申请/专利号US201816220261
发明设计人 YUNG-TSUN LIU;
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申请日2018-12-14
分类号H01L21/465;H01L21/8238;H01L29/78;H01L29/165;H01L21/441;H01L21/8258;H01L27/092;H01L29/08;H01L29/161;H01L29/26;H01L29/423;H01L29/66;H01L21/311;H01L29/06;
国家 US
入库时间 2022-08-21 11:26:41

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