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Integrated circuit including field effect transistor structures with gate and field electrodes and methods for manufacturing and operating an integrated circuit

机译:包括具有栅极和场电极的场效应晶体管结构的集成电路以及制造和操作集成电路的方法

摘要

An integrated circuit includes a first and a second field effect transistor structure. The first field effect transistor structure includes a first gate electrode structure and a first field electrode structure. The second field effect transistor structure includes a second gate electrode structure and a second field electrode structure. The first and the second gate electrode structures are electrically separated from each other. The first and the second field electrode structures are separated from each other.
机译:集成电路包括第一和第二场效应晶体管结构。第一场效应晶体管结构包括第一栅电极结构和第一场电极结构。第二场效应晶体管结构包括第二栅电极结构和第二场电极结构。第一栅电极结构和第二栅电极结构彼此电分离。第一场电极结构和第二场电极结构彼此分离。

著录项

  • 公开/公告号US10522675B2

    专利类型

  • 公开/公告日2019-12-31

    原文格式PDF

  • 申请/专利权人 CHRISTOPH KADOW;

    申请/专利号US201213358272

  • 发明设计人 CHRISTOPH KADOW;

    申请日2012-01-25

  • 分类号H01L29/66;H01L29/739;H01L21/02;H01L27/088;H01L29/78;H01L21/8234;H01L29/40;H01L29/423;H01L29/06;H01L29/10;

  • 国家 US

  • 入库时间 2022-08-21 11:26:38

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