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Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

机译:用于在水环境中运行的互补集成电路的浇口N型有机场效应晶体管

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The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm~(–2) in full accumulation and a mobility–capacitance product of 7 × 10~(–3) μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.
机译:这里报道了N型水栅有机场效应晶体管(WGOFET)的第一次演示,以及简单的防水互补的集成电路,以反相逻辑门的形式。对于N型WGOFET有源层,已经比较了高电子亲和有机半导体,包括萘二酰亚胺共聚物和可溶性富勒烯衍生物,后者使得高电双层电容在1μFcm的范围内〜(-2)全累积和7×10〜(-3)μf/ v s的移动电容乘积。短期稳定性测量表明循环鲁棒性,尽管在通常被认为是苛刻的环境中操作装置,特别是对于电子传输的有机分子。这项工作铺设了前进的电路设计,用于在含水环境中的信号调理和致动,并在实施生物传感和神经调节的活性生物有机界面中打开新的视角。

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