Thin-film fullerenes for organic field-effect transistors and complementary digital logic circuits

摘要

Significant progress has been made in the area of p-type organic field-effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C_(60) and C_(70). Here, we report mobilities for C_(60) ranging from 0.02 cm~2/Vs up to 0.65 cm~2/Vs (depending on channel length), and mobilities from 0.003 cm~2/Vs up to 0.066 cm~2/Vs for C_(70). All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.