首页> 外国专利> Electronic device e.g. organic integrated circuits, organic field-effect transistors, organic thin-film transistors, organic light emitting transistors, comprises an organic layer comprising substituted heteroaryl compounds

Electronic device e.g. organic integrated circuits, organic field-effect transistors, organic thin-film transistors, organic light emitting transistors, comprises an organic layer comprising substituted heteroaryl compounds

机译:电子设备有机集成电路,有机场效应晶体管,有机薄膜晶体管,有机发光晶体管包括包含取代的杂芳基化合物的有机层

摘要

Electronic device comprises at least one organic layer comprising one or more substituted heteroaryl compounds (Q). Electronic device comprises at least one organic layer comprising one or more substituted heteroaryl compounds (Q) of formula (I) or (II), where (Q) contain at least one group R1 comprising 6-30 membered aryl ring optionally substituted with one or more R2, 5-30 membered heteroaryl ring optionally substituted with one or more R2 or an aryl group of formula (-N(Ar1) 2) (A). E : a divalent group comprising S=O or S(=O) 2; W1, X : N, P or CR1; Y1 : NR1, PR1, O or S; Z : C (when a substituent is attached), CR1 or N; R1 : C(=O)R2, CN, Si(R2) 3, N(R2) 2, NO 2, P(=O)(R2) 2, S(=O)R2, S(= O) 2R2, linear 1-20C-alkyl, linear 1-20C-alkoxy, linear 1-20C-thioalkyl, branched or cyclic 3-20C-alkyl, branched or cyclic 3-20C-alkoxy, branched or cyclic 3-20C-thioalkyl, branched or cyclic 3-20C-alkynyl, branched or cyclic 3-20C-alkenyl (where one or more CH 2 is optionally replaced by -R2C=CR2-, -CC-, Si(R2) 2, C=O, C=S, C=NR2, -C(=O)O-, -C(=O)NR2, NR2, P(=O)(R2)-O-, -S-, SO or SO2 and one or more H are optionally replaced by D, F, Cl, Br, I, CN or NO 2), 5-30 membered (hetero)aryl ring, 5-30 membered (hetero)aryloxy (all optionally substituted by R2), H, D, F, Cl, Br or I, where two or more R1 are optionally linked to form a ring; R2 : C(=O)R3, Si(R3) 3, N(R3) 2, NO 2, P(=O)(R3) 2, S(=O)R3, S(= O) 2R3, linear 1-20C-alkyl, linear 1-20C-alkoxy, linear 1-20C-thioalkyl, branched or cyclic 3-20C-alkyl, branched or cyclic 3-20C-alkoxy, branched or cyclic 3-20C-thioalkyl, branched or cyclic 3-20C-alkynyl, branched or cyclic 3-20C-alkenyl (where one or more CH 2 is optionally replaced by -R2C=CR2-, -CC-, Si(R2) 2, C=O, C=S, C=NR2, -C(=O)O-, -C(=O)NR2, NR2, P(=O)(R2)-O-, -S-, SO or SO 2 and one or more H are optionally replaced by D, F, Cl, Br, I, CN or NO 2), 5-30 membered (hetero)aryl ring, 5-30 membered (hetero)aryloxy (all optionally substituted by R3), CN, H, D, F, Cl, Br or I, where two or more R2 are optionally linked to form a ring; R3 : H, D, F or an aliphatic or (hetero)aryl 1-20C-organic group (in which one or more H atoms are optionally replaced by D or F), where two or more R3 are optionally linked to form a ring; and Ar1 : 5-30 membered (hetero)aryl ring optionally substituted by one or more R3. Independent claims are included for: (1) the substituted heteroaryl compounds (Q) comprising (Qb)-(Qi); (2) an oligomer, a dendrimer or a polymer comprising (Q), where the bond(s) to the polymer, oligomer or dendrimer many be located at any position substituted with R1 or R2; (3) a formulation comprising (Q) and at least one solvent; and (4) the preparation of (Q). Ar2 : 5-10 membered (hetero)aryl optionally substituted with R2; Het : heteroaryl group of formula (a)-(e); T : N or CR2; and m : 0 or 1, where the sum of m is 1. [Image] [Image] [Image] [Image].
机译:电子器件包括至少一个有机层,该有机层包含一种或多种取代的杂芳基化合物(Q)。电子设备包括至少一个有机层,该有机层包含一种或多种式(I)或(II)的取代的杂芳基化合物(Q),其中(Q)包含至少一个基团R1,该基团R6包含任选地被一个或多个取代的6-30元芳基环。多个R 2,任选地被一个或多个R 2或式(-N(Ar 1)2)(A)的芳基取代的5-30元杂芳基环。 E:包含S = O或S(= O)2的二价基团; W1,X:N,P或CR1; Y1:NR1,PR1,O或S; Z:C(连接取代基时),CR1或N; R1:C(= O)R2,CN,Si(R2)3,N(R2)2,NO 2,P(= O)(R2)2,S(= O)R2,S(= O)2R2,线性1-20C-烷基,线性1-20C-烷氧基,线性1-20C-硫代烷基,支链或环状3-20C-烷基,支链或环状3-20C-烷氧基,支链或环状3-20C-硫代烷基,支链或环状环状3-20C炔基,支链或环状3-20C烯基(其中一个或多个CH 2可选地由-R2C = CR2-,-CC-,Si(R2)2,C = O,C = S取代, C = NR2,-C(= O)O-,-C(= O)NR2,NR2,P(= O)(R2)-O-,-S-,SO或SO2和一个或多个H可选地被取代D,F,Cl,Br,I,CN或NO 2),5-30元(杂)芳基环,5-30元(杂)芳氧基(均被R2取代),H,D,F,Cl ,Br或I,其中两个或多个R1任选地连接形成环; R2:C(= O)R3,Si(R3)3,N(R3)2,NO 2,P(= O)(R3)2,S(= O)R3,S(= O)2R3,线性1 -20C-烷基,线性1-20C-烷氧基,线性1-20C-硫代烷基,支链或环状3-20C-烷基,支链或环状3-20C-烷氧基,支链或环状3-20C-硫代烷基,支链或环状3 -20C-炔基,支链或环状3-20C-烯基(其中一个或多个CH 2可选地由-R2C = CR2-,-CC-,Si(R2)2,C = O,C = S,C = NR2,-C(= O)O-,-C(= O)NR2,NR2,P(= O)(R2)-O-,-S-,SO或SO 2和一个或多个H可选地被取代D,F,Cl,Br,I,CN或NO 2),5-30元(杂)芳基环,5-30元(杂)芳氧基(均可选被R3取代),CN,H,D,F, Cl,Br或I,其中两个或多个R 2任选地连接形成环; R3:H,D,F或脂族或(杂)芳基1-20C-有机基团(其中一个或多个H原子可选地被D或F取代),其中两个或多个R3可选地连接形成环; Ar 1:5-30元(杂)芳基环,其任选地被一个或多个R 3取代。包括以下独立权利要求:(1)包含(Qb)-(Qi)的取代的杂芳基化合物(Q); (2)一种低聚物,树枝状聚合物或包含(Q)的聚合物,其中与该聚合物,低聚物或树枝状聚合物的键可以位于被R 1或R 2取代的任何位置上; (3)包含(Q)和至少一种溶剂的制剂; (4)制备(Q)。 Ar 2:任选被R 2取代的5-10元(杂)芳基; Het:式(a)-(e)的杂芳基; T:N或CR2;和m:0或1,其中m的总和为1。[Image] [Image] [Image] [Image]。

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