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Reversing the effects of hot carrier injection and bias threshold instability in SRAMs
Reversing the effects of hot carrier injection and bias threshold instability in SRAMs
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机译:扭转热载流子注入和SRAM中偏置阈值不稳定性的影响
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摘要
The independent claims of this patent signify a concise description of embodiments. Disclosed is technology for detrapping charges in gate dielectrics in P-channel pull-up transistors and N-channel pull-down transistors in a portion of a static random access memory (SRAM) array due to hot carrier injection (HCI), negative bias temperature instability (NBTI) and positive bias instability (PBTI). This Abstract is not intended to limit the scope of the claims.
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