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Circuitry and method for measuring negative bias temperature instability (NBTI) and hot carrier injection (HCI) aging effects using edge sensitive sampling

机译:使用边缘敏感采样来测量负偏置温度不稳定性(NBTI)和热载流子注入(HCI)老化效应的电路和方法

摘要

Toggling functional critical path timing sensors measure delays in toggling functional critical paths that continuously receive patterns from an aging pattern generator. Wear is accelerated. A margin delay adjustment controller sweeps margin delays until failures occur to measure delays. The margin delay is then adjusted in functional critical path timing sensors that add the margin delay to functional critical paths that carry user data or chip controls during normal operation. When the path delays fail to meet requirements, the functional critical path timing sensors signal a controller to increase VDD. When no failures occur over a period of time, the controller decreases VDD. Wear on the toggling functional critical paths is accelerated using both toggle and low-transition-density patterns. Circuit aging is compensated for by increasing margin delays to timing sensors.
机译:切换功能关键路径时序传感器可​​测量切换功能关键路径中的延迟,该延迟可连续接收来自老化模式生成器的模式。磨损加快。裕量延迟调整控制器清除裕量延迟,直到发生故障以测量延迟为止。然后在功能关键路径时序传感器中调整裕量延迟,这些功能会将裕量延迟添加到在正常操作期间承载用户数据或芯片控制的功能关键路径中。当路径延迟无法满足要求时,功能关键路径时序传感器会向控制器发送信号,以增加VDD。在一段时间内未发生任何故障时,控制器会降低VDD。使用切换和低过渡密度模式,可加快切换功能关键路径的磨损。电路老化通过增加定时传感器的裕量延迟来补偿。

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