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REPLACEMENT METAL GATE FORMATION OF PMOS ULTRA-LOW VOLTAGE DEVICES USING A THERMAL IMPLANT
REPLACEMENT METAL GATE FORMATION OF PMOS ULTRA-LOW VOLTAGE DEVICES USING A THERMAL IMPLANT
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机译:热植入法替代PMOS超低压器件的金属门形成
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摘要
Disclosed are methods of forming devices. One method may include providing a first set of fins and a second set of fins extending from a substrate, and providing a dummy oxide over the first set of fins and the second set of fins. The method may further include performing a thermal implant to the second set of fins, wherein the thermal implant is an angled ion implant impacting the dummy oxide. The method may further include removing the dummy oxide from the first set of fins and the second set of fins, and forming a first work function (WF) metal over the first set of fins and a second WF metal over the second set of fins.
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