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FERROELECTRIC GATE OXIDE BASED TUNNEL FEFET MEMORY
FERROELECTRIC GATE OXIDE BASED TUNNEL FEFET MEMORY
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机译:基于铁电氧化物的隧道FETFET存储器
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摘要
A transistor is disclosed. The transistor includes a p-type region, an intrinsic region coupled to the p-type region, an n-type region coupled to the intrinsic region, and a gate electrode above the intrinsic region. The ferroelectric material is on a bottom, a first side and a second side of the gate electrode, and above the intrinsic region.
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