JUNCTIONLESS FIELD-EFFECT TRANSISTOR HAVING METAL-INTERLAYER-SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor component is disclosed. The semiconductor component can include: a semiconductor layer injected with a same type of dopant; a gate electrode formed above the semiconductor layer with a gate insulation film positioned in-between; a dielectric layer formed on the semiconductor layer at both sides of the gate electrode; and source/drain electrodes each formed on the dielectric layer.