首页> 外国专利> POLISHING LIQUID, CONCENTRATE OF SAME, METHOD FOR PRODUCING POLISHED ARTICLE USING POLISHING LIQUID, AND POLISHING METHOD OF SUBSTRATE USING POLISHING LIQUID

POLISHING LIQUID, CONCENTRATE OF SAME, METHOD FOR PRODUCING POLISHED ARTICLE USING POLISHING LIQUID, AND POLISHING METHOD OF SUBSTRATE USING POLISHING LIQUID

机译:抛光液,浓缩液,使用抛光液生产抛光制品的方法以及使用抛光液进行基质抛光的方法

摘要

This polishing liquid is used for polishing of a siliceous substrate that has a surface roughness Ra of from 0.01 μm to 0.2 μm (inclusive). This polishing liquid contains ceria abrasive grains, silica abrasive grains and water. The average particle diameter D50 of the ceria abrasive grains is from 120 nm to 550 nm (inclusive). The average particle diameter D50 of the silica abrasive grains is from 40 nm to 140 nm (inclusive). The mass ratio of the silica abrasive grains to the ceria abrasive grains in the polishing liquid, namely the value of (silica abrasive grains)/(ceria abrasive grains) is from 4/100 to 150/100 (inclusive). The content of the ceria abrasive grains in the polishing liquid is from 0.25% by mass to 2.5% by mass (inclusive). The content of the silica abrasive grains in the polishing liquid is from 0.1% by mass to 1.5% by mass (inclusive).
机译:该抛光液用于抛光具有0.01μm至0.2μm(含)的表面粗糙度Ra的硅质基底。该抛光液包含二氧化铈磨粒,二氧化硅磨粒和水。所述二氧化铈磨粒的平均粒径D 50 为120nm至550nm(含)。二氧化硅磨粒的平均粒径D 50 为40nm至140nm(包括端点)。抛光液中的二氧化硅磨粒与二氧化铈磨粒的质量比,即(二氧化硅磨粒)/(二氧化铈磨粒)的值为4/100〜150/100(含)。研磨液中的二氧化铈磨粒的含量为0.25质量%以上且2.5质量%以下。研磨液中的二氧化硅磨粒的含量为0.1质量%以上1.5质量%以下。

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