PRECURSORS AND PROCESSES FOR DEPOSITION OF SI-CONTAINING FILMS USING ALD AT TEMPERATURE OF 550ºC OR HIGHER

摘要

Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50°C, exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiR¹_yR²_4-x-y(NH-SiR'₃)_x, wherein x=2, 3, 4; y=0, 1, 2, R¹ and R² each are independently selected from H, a halogen (Cl, Br, I), an C₁-C₄ alkyl, an isocyanate, a C₁-C₄ alkoxide, or an -NR³R⁴ group in which R³ and R⁴ each are independently selected from H, a C₁-C₄ alkyl, provided that if R³=H, R⁴ C₁; each R' is independently selected from H, a halogen (Cl, Br, I), or a C₁-C₄ alkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH₂(NH~Si(CH₃)₃)₂, SiHCI(NH-Si(CH₃)₃)₂, SiCI₂(NH~ Si(CH₃)₃)₂, SiH(NH-Si(CH₃)₃)₃, SiCI(NH-Si(CH₃)₃)₃, or Si(NH-Si(CH₃)₃)₄.