METHOD FOR MANUFACTURING TOP LIGHT-EMITTING TYPE INDIUM GALLIUM ZINC OXIDE THIN FILM TRANSISTOR DEVICE

摘要

A method for manufacturing a light-emitting type indium gallium zinc oxide thin film transistor device. The method comprises a first photolithography step (S01), a second photolithography step (S02), a gate insulating layer formation step (S03), a third photolithography step (S04), a source via-hole formation step (S05), an indium gallium zinc oxide active layer exposure step (S06), a source/drain formation step (S07), a planarization layer formation step (S08), a fourth photolithography step (S09), a fifth photolithography step (S10) and a sixth photolithography step (S11). A gate electrode and a source/drain electrode are prepared using a polyimide electrode barrier isolation column (61), and the source/drain electrode and the gate electrode can be directly formed by the electrode barrier isolation column (61), such that three photomasks are reduced to one. Moreover, polyimide, as a gate insulating layer (50), can increase channel current density, thereby simplifying the complexity of the manufacturing method and improving the production efficiency.