首页> 外国专利> MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTI-LAYER REFLECTIVE COATING, REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK, TRANSMISSION-TYPE MASK BLANK, TRANSMISSION-TYPE MASK, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTI-LAYER REFLECTIVE COATING, REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK, TRANSMISSION-TYPE MASK BLANK, TRANSMISSION-TYPE MASK, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

机译:掩膜基板,多层反射膜基板,反射式掩膜基板,反射式掩膜基板,透射式掩膜基板,透射式掩膜基板以及半导体装置的制造方法

摘要

The present invention prevents pressure from being exerted locally and minimizes generation of dust from a gripping part when a mask blank substrate is gripped by a transfer robot. This mask blank substrate 10 is provided with: first and second main surfaces 12a, 12b; four lateral surfaces 16a-16d; first to fourth chamfered faces 18a-18d that are formed between the first main surface 12a and the four lateral surfaces 16a-16d; and fifth to eighth chamfered faces 18a'-18d' that are formed between the second main surface 12b and the four lateral surfaces 16a-16d. When the seventh chamfered face 18c' is defined as a reference plane Pc' in a cross-section A that is substantially perpendicular to the first and second main surfaces 12a, 12b and the two lateral surfaces 16a, 16c, the parallelism of an outline La of the first chamfered face 18a situated in a diagonal direction from the seventh chamfered face 18c' is at most 0.02 mm. When the first chamfered face 18a is defined as a reference plane Pa, the parallelism of an outline Lc' of the seventh chamfered face 18c' is at most 0.02 mm.
机译:本发明防止了当由传送机械手抓取掩模毛坯基板时局部地施加压力并且最小化了从抓持部产生的灰尘。该掩模坯料基板10设置有:第一主表面12a和第二主表面12b;以及第二主表面12a和第二主表面12b。四个侧面16a-16d;在第一主表面12a和四个侧面16a-16d之间形成的第一至第四斜切面18a-18d。在第二主表面12b和四个侧面16a-16d之间形成的第五至第八倒角面18a'-18d'。当将第七斜切面18c'在基本垂直于第一和第二主表面12a,12b以及两个侧面16a,16c的横截面A中定义为基准平面Pc'时,轮廓La的平行度与第七倒角面18c'在对角线方向上的第一倒角面18a的最大直径为0.02mm。当将第一斜切面18a定义为参考平面Pa时,第七斜切面18c'的轮廓Lc'的平行度最大为0.02mm。

著录项

  • 公开/公告号WO2020203338A1

    专利类型

  • 公开/公告日2020-10-08

    原文格式PDF

  • 申请/专利权人 HOYA CORPORATION;

    申请/专利号WO2020JP12223

  • 发明设计人 NAKAMURA AYUMI;

    申请日2020-03-19

  • 分类号C03C17/36;G03F1/20;G03F1/24;G03F1/32;G03F1/38;G03F1/46;G03F1/48;G03F1/60;G03F7/20;

  • 国家 WO

  • 入库时间 2022-08-21 11:09:02

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号