MANUFACTURING METHOD OF FREE STANDING GALLIUM NITRIDE USING ELECTROCHEMICAL ETCHING METHOD AND PHOTOELECTRIC ELECTRODE FOR WATER DECOMPOSITION GYDROGEN PRODUCTION INCLUDING THE SAME

摘要

The bending of the free standing gallium nitride substrate can be controlled by etching and planarizing the N-face of the gallium nitride substrate in the form of a convex using an electrochemical etching method capable of fast etching and selective etching. Disclosed is a method for manufacturing a free standing gallium nitride substrate using an electrochemical etching method and a photoelectrode for producing hydrolysis hydrogen containing the same. A method of manufacturing a free standing gallium nitride substrate using an electrochemical etching method according to the present invention includes: (a) preparing a gallium nitride substrate in a convex form; And (b) etching and planarizing the N-face of the gallium nitride substrate by an electrochemical etching method, wherein in the step (b), the etching is performed at an applied voltage condition of 20 to 40V. Characterized in that it is carried out.