首页> 外国专利> METHOD FOR MANUFACTURING A FREE-STANDING GALLIUM NITRIDE SUBSTRATE USING POLYCRYSTALLINE GALLIUM NITRIDE POWDER

METHOD FOR MANUFACTURING A FREE-STANDING GALLIUM NITRIDE SUBSTRATE USING POLYCRYSTALLINE GALLIUM NITRIDE POWDER

机译:用多晶氮化镓粉末制备游离氮化镓基体的方法

摘要

PURPOSE: A method for manufacturing a free-standing gallium nitride substrate is provided to prevent a substrate from being bent and crack generation by manufacturing the free-standing gallium nitride substrate using polycrystalline gallium nitride substrate having similar thermal expansion coefficients.;CONSTITUTION: Polycrystalline gallium nitride powder deposited on a reactor or a susceptor is collected. The collected polycrystalline gallium nitride powder is put in a molding frame. A polycrystalline gallium nitride substrate is manufactured by sintering the polycrystalline gallium nitride powder. A single crystal gallium nitride layer letting single crystal gallium nitride grow is formed on the polycrystalline gallium nitride substrate.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Power collection step; (BB) Mounting step; (CC) Polycrystalline gallium nitride substrate manufacturing step; (DD) Single crystal gallium nitride layer forming step
机译:目的:提供一种用于制造自支撑氮化镓衬底的方法,以通过使用具有类似热膨胀系数的多晶氮化镓衬底来制造自支撑氮化镓衬底来防止衬底弯曲和裂纹的产生;组成:多晶镓收集沉积在反应器或基座上的氮化物粉末。将收集的多晶氮化镓粉末放入成型框架中。通过烧结多晶氮化镓粉末来制造多晶氮化镓衬底。在多晶氮化镓衬底上形成使单晶氮化镓生长的单晶氮化镓层。COPYRIGHTKIPO 2013; [参考数字](AA)功率收集步骤;和(BB)安装步骤; (CC)多晶硅氮化镓衬底的制造步骤; (DD)单晶氮化镓层形成步骤

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