Disclosed is a non-lead perovskite piezoelectric thin film capable of achieving a compact thin film structure without cracking even at a thickness of a few micrometers (µm) or more using a sol-gel method and a method of manufacturing the same. A method of manufacturing a non-lead perovskite piezoelectric thin film according to the present invention includes: (a) forming a first synthetic solution and a second synthetic solution; (b) coating the first synthetic solution on a substrate and heat-treating to form a porous piezoelectric bottom thin film having a plurality of pores; And (c) coating a second synthetic solution on the porous piezoelectric bottom thin film on the substrate and heat-treating to form a dense piezoelectric top thin film covering the porous piezoelectric bottom thin film and a plurality of pores. .
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