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Single-Source Vapor-Deposited Cs2AgBiBr6 Thin Films for Lead-Free Perovskite Solar Cells

机译:单源气相沉积Cs2AgBiBr6薄膜用于无铅钙钛矿太阳能电池

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摘要

Lead-free double perovskites have been considered as a potential environmentally friendly photovoltaic material for substituting the hybrid lead halide perovskites due to their high stability and nontoxicity. Here, lead-free double perovskite Cs AgBiBr films are initially fabricated by single-source evaporation deposition under high vacuum condition. X-ray diffraction and scanning electron microscopy characterization show that the high crystallinity, flat, and pinhole-free double perovskite Cs AgBiBr films were obtained after post-annealing at 300 °C for 15 min. By changing the annealing temperature, annealing time, and film thickness, perovskite Cs AgBiBr solar cells with planar heterojunction structure of FTO/TiO /Cs AgBiBr /Spiro-OMeTAD/Ag achieve an encouraging power conversion efficiency of 0.70%. Our preliminary work opens a feasible approach for preparing high-quality double perovskite Cs AgBiBr films wielding considerable potential for photovoltaic application.
机译:由于无铅双钙钛矿的高稳定性和无毒性,它们被认为是替代杂化卤化铅钙钛矿的潜在环保光伏材料。在这里,无铅双钙钛矿Cs AgBiBr薄膜最初是在高真空条件下通过单源蒸发沉积制备的。 X射线衍射和扫描电子显微镜表征表明,在300°C后退火15分钟后,可获得高结晶度,平坦且无针孔的双钙钛矿Cs AgBiBr膜。通过改变退火温度,退火时间和膜厚,具有平面异质结结构的FTO / TiO / Cs AgBiBr / Spiro-OMeTAD / Ag的钙钛矿Cs AgBiBr太阳能电池实现了令人鼓舞的0.70%的功率转换效率。我们的初步工作为制备高质量的双钙钛矿Cs AgBiBr薄膜提供了可行的方法,该薄膜具有巨大的光电应用潜力。

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