Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film

摘要

Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm⁻¹ or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm⁻¹ measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm⁻¹ measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.