PATTERNING OF VERTICAL NANOWIRE TRANSISTOR CHANNEL AND GATE WITH DIRECTED SELF ASSEMBLY

摘要

An inductive self-assembly (DSA) material or diblock copolymer for patterning features that ultimately define the gate electrode and channel region of a vertical nanowire transistor based on a single lithographic operation is disclosed. In embodiments, the DSA material is confined within a patterned guide opening using conventional lithography. In embodiments, channel regions and gate electrode materials are aligned with respect to edges of separate regions in the DSA material.