HIGH-PURITY SEMICONDUCTING SWCNT AND PSEUDO-CUBIC In2O3 BASED HETEROSTRUCTURE MATERIALS AND PREPARATION METHOD THEREOF

摘要

The present invention relates to a novel material having excellent properties required for an electrode of a supercapacitor, and a synthesis method thereof, instead of using a metal oxide semiconductor alone or simply using SWCNT together without distinguishing between s-SWCNT and m-SWCNT. , By introducing only pure s-SWCNT separated from m-SWCNT as an additive for heterojunction with In ₂ O ₃ , the heterostructure of s-SWCNT / In ₂ O ₃ is synthesized through thermal hydration and used as an electrode material of supercapacitor. By utilizing, high-purity semiconductor-type single-walled carbon nanotubes and cubic-type indium oxide-based heterojunction materials capable of significantly improving the performance of devices such as non-capacitance, power density, and cycle stability, manufacturing methods thereof, and applied thereto It is about optimal conditions.