Improved sense amplifier with bit line pre-charge circuit for reading flash memory cells in array

摘要

The present invention relates to an improved sense amplifier for reading values in flash memory cells of an array. In one embodiment, the sense amplifier includes an improved pre-charging circuit for pre-charging the bit line during the pre-charging period to increase the speed of read operations. In another embodiment, the sense amplifier includes a simplified address decoding circuitry to increase the speed of read operations.