A Wide-Range-Supply-Voltage Sense Amplifier Circuit for Embedded Flash Memory

摘要

This brief presents a novel mode-switch sense amplifier (SA) for embedded Flash (eFlash) memories, which is capable of operating at a wide range power supply voltage from 0.9V to 1.7V. A new dynamic bit-line (BL) clamping circuit and a voltage-boosted column multiplexer are also introduced to increase the clamped BL voltage at low supply voltage. Along with the enhanced current reference and voltage reference generating circuit for automatic sensing window tracking, the proposed SA can achieve a larger sensing window, and consequently improve the sensing speed. This SA is implemented in a 2-Mb eFlash memory on HHGrace 130nm CMOS platform. The high-speed access time of 19ns and 46ns are respectively achieved at typical power supply voltage (1.5V) and low supply voltage (1.0V).