- WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH

摘要

Methods for dicing semiconductor wafers each having a plurality of integrated circuits are described. The method includes forming a mask over the semiconductor wafer. The mask consists of a layer that covers and protects the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. Patterning exposes areas of the semiconductor wafer between integrated circuits. Next, to singulate integrated circuits, the semiconductor wafer is etched through the gaps in the patterned mask.