2 Cu Bonding method by 2 step plasma treatment and Cu Bonding package

摘要

The present invention relates to a copper bonding method, in the copper bonding method for copper-to-Cu (Cu-to-Cu) bonding between the objects to be joined, the surface of the first copper layer formed on the first object to be cleaned is activated A first plasma treatment step, and a second plasma treatment step of forming an antioxidant layer on the surface of the first copper layer to prevent oxidation of the activated first copper layer, and the first copper layer on which the antioxidant layer is formed. And, aligning a second copper layer formed on the second to-be-joined body to be joined to the first to-be-joined body, and thermally compressing the first to-be-joined body and the second to-be-joined body, thereby thermally decomposing the antioxidant layer. It relates to a copper bonding method by a two-step plasma treatment, characterized in that it comprises a step of copper-to-copper bonding at the junction between the first to-be-joined body and the second to-be-joined body, and to a joined body produced thereby. As a result, the process is very simple due to plasma treatment and thermocompression, and the junction is made of only copper, so it has excellent electrical and thermal conductivity properties, and a low-temperature bonding process is possible.