CREATING SELF-ALIGNED GATE AND SOURCE / DRAIN CONTACTS USING A VICTIM GATE CAP SPACER AND RESULTING DEVICE

摘要

A method includes forming an active layer, forming a gate structure over a channel region of the active layer, forming a sidewall spacer adjacent to the gate structure, forming a first dielectric layer adjacent to the sidewall spacer, recessing the gate structure to define a gate recess, forming an inner spacer in the gate recess, forming a cover layer in the gate recess, recessing the first dielectric layer and the sidewall spacer to expose side wall surfaces of the cover layer, removing the inner spacer to define a first spacer recess, forming an upper spacer in the Spacer recess and in contact with sidewall surfaces of the cover layer, forming a second dielectric layer over the top spacer and cover layer, and forming a first contact structure that is at least partially i n the second dielectric layer is embedded and contacts a surface of the upper spacer.