Measurement illumination optics are used to guide illumination light (3) into an object field of a projection exposure system for EUV lithography, in which a lithography mask can be arranged. A field facet mirror of the illumination optics has a plurality of field facets (7, 7 ') and a pupil facet mirror of the illumination optics has a plurality of pupil facets (11). The latter serve to superimpose field facet images (12) of the field facets (7) in the object field. A field facet imaging channel (12a) of the illumination light (3) is guided over a respective field facet (7) and a respective pupil facet (11). A field stop (29) is used to specify a field boundary of an illumination field (31) in an object plane (17) in which the object field is arranged. The illumination field (31) has a greater extent along a field dimension (y) than in each case one of the field facet images (12). At least some of the field facets (7 ') have tilting actuators (7a) which ensure that the illumination light (3) is guided over different field facets (7, 7') and one and the same pupil facet (11) into the illumination field (31). The result is a measurement and illumination optics with which full illumination of an illumination field is possible which has a greater extent along a field dimension than a field facet image in the object plane.
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