A proposal of high power EUV lithography illumination system using synchrotron radiation

摘要

A concept of a synchrotron radiaiton (SR) beam ine and illumination system to be used for exremeultra-violet lithography (EUVL) is proposed. The SR in this case is bending radiation, and the eectron energy of a storage ring is 500MeV, the bending magnetic field 1.5T, and he stored current 1A. The radiaiton in 30 deg is collected by 4 aspheric mirrors and brought to a mas ring-field through 4 pieces of multi-layer mirrors and a grazing-incidence mirror. The total power for EUVL is 5.3W. The beam line design including vacuum sytme and radiation shielding sructre is studied. The power level at the wafer can be as hgih as 15 mW/cm~2 depending on mirror collection efficiency and windows to be used.