High average power laser for EUV lithography

摘要

We have demonstrated the operation of a high average power, all solid state laser and target system for EUV lithography. The laser operates at 1.06 (mu)m with a pulse repetition rate of 200 Hz. Each pulse contains up to 400 mJ of energy and is less than 10 ns in duration. The ELTV conversion efficiency measured with the laser is independent of the laser repetition rate. Operating at 200 Hz, the laser has been used for lithography using a 3 bounce Kohler illuminator.