Study of Zn O,S Films grown by Aerosol Assisted Chemical Vapour Deposition and their Application as Buffer Layers in Cu In,Ga S,Se 2 Solar Cells

摘要

To reduce the use of toxic and expensive elements in chalcopyrite thin film solar cells, materials such as cadmium or indium used in buffer layers need to be substituted. Zn O,S is considered to be a potential buffer layer material when deposited with a fast and inexpensive method. Zn O,S layers have been prepared by aerosol assisted chemical vapour deposition AACVD technique. AACVD technique is a simple non vacuum process where the thin film deposition temperatures do not exceed 250 C. 10 mM spray solution was made by dissolving zinc II acetylacetonate monohydrate in ethanol. The films were grown on Mo substrate at 225 C film growth temperature . The effect of deposition parameters spray solution concentration, N2 flow rate, H2S flow rate on Zn O,S thin film properties were studied with SEM and XRD. Thereupon optimizing the deposition parameters, homogeneous and compact Zn O,S thin films were obtained and the films were employed in the chalcopyrite thin film solar cell structure by growing films on Cu In,Ga S,Se 2 substrates industrially produced by BOSCH Solar CISTech GmbH. The resulting cells were studied using current voltage and quantum efficiency analysis and compared with solar cell references that include In2S3 and CdS as buffer layer deposited by ion layer gas reaction and chemical bath deposition, respectively. The best output of the solar cell containing Zn O,S as buffer layer and without intrinsic ZnO under standard test conditions AM 1.5G, 100 mW cm2, 25 C is Voc 573 mV, Jsc 39.2 mA cm2, FF 68.4 and efficiency of 15.4 being slightly better than the In2S3 or CdS containing solar cell references