Variation and reliability in digital CMOS circuit design

摘要

The silicon chip industry continues to provide devices with feature sizes at Ultra-Deep-Sub-Micron (UDSM) dimensions. This results in higher device density and lower power and cost per function. While this trend is positive, there are a number of negative side effects, including the increased device parameter variation, increased sensitivity to soft errors, and lower device yields. The lifetime of next- generation devices is also decreasing due to lower reliability margins and shorter product lifetimes.This thesis presents an investigation into the challenges of UDSM CMOS circuit design, with a review of the research conducted in this field. This investigation has led to the development of a methodology to determine the timing vulnerability factors of UDSM CMOS that leads to a more realistic definition of the Window of Vulnerability (WOV) for Soft-Error-Rate (SER) computation.We present an implementation of a Radiation-Hardened 32-bit Pipe-lined Processor as well as two novel radiation hardening techniques at Gate-level. We present a Single Event-Upset (SEU) tolerant Flip-Flop design with 38% less power overhead and 25% less area overhead at 65nm technology, compared to the conventional Triple Modular Redundancy (TMR) technique for Flip-Flop design. We also propose an approach for in-field repair (IFR) by trading area for reliability. In the case of permanent faults, spare logic blocks will replace the faulty blocks on the fly. The simulation results show that by tolerating approximately 70% area overhead and less than 18% power overhead, the reliability is increased by a factor of x10 to x100 for various component failure rates.