50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

摘要

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF, A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss,