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Neutron-induced Single Event Upset on the RPC front-end chips for the CMS experiment

机译:用于CMS实验的RPC前端芯片上的中子诱发的单事件翻转

摘要

Neutrons from a reactor and from a cyclotron have been used to characterise the CMS Resistive Plate Chambers (RPCs) front-end chip to neutron-induced damaging events. Single Event Upset (SEU) cross-sections have been measured up to 60 MeV for different chip thresholds. Tests at a reactor were done with an integrated fast (E(n) > 3 MeV) neutron fluence of 1.7 x 10(10) cm(-2) and a thermal neutron fluence of 9.5 x 10(11) cm(-2). High-energy neutrons from a cyclotron were used up to a fluence of 10(12) cm(-2). Data indicate the existence of a chip SEU sensitivity already at thermal energy and a saturated SEU cross-section from 3 to 60 MeV. Values of the SEU cross-sections from the thermal run well agree with those obtained by another CMS group that uses the same technology (0.8 mum BiCMOS) though with different architecture. Cross-sections obtained with fast neutrons (from 3 MeV to about 10 MeV) are consistently higher by one order of magnitude compared to the thermal one. The average time between consecutive SEU events in each chip of the CMS barrel RPCs can be estimated to be 1 h. (C) 2002 Elsevier Science B.V. All rights reserved.
机译:来自反应堆和回旋加速器的中子已用于表征CMS电阻板腔(RPC)前端芯片对中子诱发的破坏事件的影响。对于不同的芯片阈值,单事件翻转(SEU)横截面的测量值高达60 MeV。使用1.7 x 10(10)cm(-2)的集成快速(E(n)> 3 MeV)中子通量和9.5 x 10(11)cm(-2)的热中子通量进行反应堆测试。来自回旋加速器的高能中子的通量达10(12)cm(-2)。数据表明在热能和3至60 MeV的饱和SEU横截面下已经存在芯片SEU灵敏度。热运行过程中的SEU横截面值与另一个使用相同技术(0.8微米BiCMOS)但结构不同的CMS组获得的值非常吻合。快中子(从3 MeV到大约10 MeV)获得的横截面始终比热中子高一个数量级。 CMS桶RPC的每个芯片中连续SEU事件之间的平均时间可以估计为1小时。 (C)2002 Elsevier Science B.V.保留所有权利。

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    Nuzzo S; et al.;

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