Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM

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• 来源
  《中国物理：英文版》 |2021年第3期|443-451|共9页
• 作者

  Li-Hua Mo; Bing Ye; Jie Liu; Jie Luo; You-Mei Sun; Chang Cai; Dong-Qing Li; Pei-Xiong Zhao; Ze He;

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• 作者单位

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

  Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China;

  University of Chinese Academy of Sciences Beijing 100049 China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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• 入库时间 2024-01-06 16:33:16