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Conversion of n-type CuTCNQ into p-type nitrogen-doped CuO and the implication for room temperature gas sensing

机译:n型CuTCNQ转化为p型氮掺杂CuO及其对室温气体传感的意义

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摘要

Sensors to detect toxic and harmful gases are usually based on metal oxides that are operated at elevated temperature. However, enabling gas detection at room temperature (RT) is a significant ongoing challenge. Here, we address this issue by demonstrating that microrods of semiconducting CuTCNQ (TCNQ=7,7,8,8-tetracyanoquinodimethane) with nanostructured features can be employed as conductometric gas sensors operating at 50°C for detection of oxidizing and reducing gases such as NO2 and NH3. The sensor is evaluated at RT and up to 200°C. It was found that CuTCNQ is transformed into a N-doped CuO material with p-type conductivity when annealed at the maximum temperature. This is the first time that such a transformation, from a semiconducting charge transfer material into a N-doped metal oxide is detected. It is shown here that both the surface chemistry and the type of majority charge carrier within the sensing layer is critically important for the type of response towards oxidizing and reducing gases. A detailed physical description of NO2 and NH3 sensing mechanism at CuTCNQ and N-doped CuO is provided to explain the difference in the response. For the N-doped CuO sensor, a detection limit of 1 ppm for NO2 and 10 ppm for NH3 are achieved.
机译:用于检测有毒有害气体的传感器通常基于在高温下运行的金属氧化物。但是,在室温(RT)下进行气体检测是一项重大的持续挑战。在这里,我们通过证明具有纳米结构特征的半导体CuTCNQ(TCNQ = 7,7,8,8-四氰基喹二甲烷)的微棒可以用作在50°C下工作的电导气体传感器来检测氧化和还原气体,例如NO2和NH3。在室温和最高200°C下对传感器进行评估。发现在最高温度下退火时,CuTCNQ转变为具有p型导电性的N掺杂CuO材料。这是第一次检测到这种从半导体电荷转移材料到N掺杂金属氧化物的转变。在此显示,对于对氧化和还原气体的响应类型,表面化学和感测层内多数电荷载流子的类型都至关重要。提供了在CuTCNQ和N掺杂的CuO上NO2和NH3感应机制的详细物理描述,以解释响应的差异。对于N掺杂的CuO传感器,NO2的检测极限为1 ppm,NH3的检测极限为10 ppm。

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