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Slurry Mean Residence Time Analysis and Pad-Wafer Contact Characterization in Chemical Mechanical Planarization

机译:化学机械平面化过程中的浆料平均停留时间分析和焊盘晶圆接触特性

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摘要

This dissertation presents a series of studies related to the slurry mean residence time analysis and the pad-wafer contact characterization in Chemical Mechanical Planarization (CMP). The purpose of these studies is to further understand the fundamentals of CMP and to explore solutions to some of CMP's challenges. Mean residence time (MRT) is a widely used term that is mostly seen in classical chemical engineering reactor analysis. In a CMP process, the wafer-pad interface can be treated as a closed system reactor, and classical reactor theory can be applied to the slurry flow through the region. Slurry MRT represents the average time it takes for fresh incoming slurry to replace the existing slurry in the region bound between the pad and the wafer. Understanding the parameters that have an impact on MRT, and therefore removal rate, is critical to maintain tight specifications in the CMP process. In this dissertation, we proposed a novel slurry injection system (SIS) which efficiently introduced fresh slurry into the pad-wafer interface to reduce MRT. Results indicated that SIS exhibited lower slurry MRT and dispersion numbers but higher removal rates than the standard pad center slurry application by blocking the spent slurry and residual rinse water from re-entering the pad-wafer interface during polishing. Another study in this dissertation dealt with the effect of pad groove width on slurry MRT in the pad-wafer interface as well as slurry utilization efficiency (η). Three concentrically grooved pads with different groove widths were tested at different polishing pressures to experimentally determine the corresponding MRT using the residence time distribution (RTD) technique. Results showed that MRT and η increased significantly when the groove width increased from 300 to 600μm. On the other hand, when the groove width increased further to 900μm, MRT continued to increase while n remained constant. Results also indicated that MRT was reduced at a higher polishing pressure while η did not change significantly with pressure for all three pads. In the last study of this dissertation, the effect of pad surface micro-texture on removal rate during tungsten CMP was investigated. Two different conditioner discs ("Disc A" and "Disc B") were employed to generate different pad surface micro-textures during polishing. Results showed that "Disc B" generated consistently lower removal rates and coefficients of friction than "Disc A". To fundamentally elucidate the cause(s) of such differences, pad surface contact area and topography were analyzed using laser confocal microscopy. The comparison of the pad surface micro-texture analysis on pad surfaces conditioned by both discs indicated that "Disc A" generated a surface having a smaller abruptness (λ) and more solid contact area which resulted in a higher removal rate. In contrast, "Disc B" generated many large near-contact areas as a result of fractured and collapsed pore walls.
机译:本文提出了与浆液平均停留时间分析和化学机械平面化(CMP)中垫-晶片接触特性有关的一系列研究。这些研究的目的是进一步了解CMP的基础知识,并探索针对CMP所面临的一些挑战的解决方案。平均停留时间(MRT)是一个广泛使用的术语,在经典化学工程反应器分析中最常见。在CMP工艺中,可以将晶圆-焊盘界面视为封闭系统反应器,并且经典反应器理论可以应用于流经该区域的浆料流。浆料MRT表示新鲜的进入的浆料替换焊盘和晶圆之间的区域中现有的浆料所需的平均时间。了解对MRT以及因此对去除率有影响的参数,对于在CMP过程中保持严格的规格至关重要。在本文中,我们提出了一种新型的浆料注入系统(SIS),该系统可以将新鲜的浆料有效地引入垫-晶圆界面以减少MRT。结果表明,SIS可以通过阻止废料浆和残留冲洗水在抛光过程中重新进入垫-晶圆界面,从而显示出比标准垫中心浆应用更低的浆MRT和分散数,但去除率更高。本文的另一项研究涉及垫槽宽度对垫-晶片界面中的浆液MRT的影响以及浆液的利用效率(η)。在不同的抛光压力下测试了三个具有不同凹槽宽度的同心凹槽垫,以使用停留时间分布(RTD)技术通过实验确定相应的MRT。结果表明,当沟槽宽度从300μm增加到600μm时,MRT和η显着增加。另一方面,当凹槽宽度进一步增加到900μm时,MRT继续增加,而n保持恒定。结果还表明,在三个抛光垫上,较高的抛光压力都会降低MRT,而η不会随压力显着变化。在本文的最后一项研究中,研究了垫表面微观纹理对钨CMP去除速率的影响。两种不同的调节剂盘(“ Disc A”和“ Disc B”)用于在抛光过程中产生不同的抛光垫表面微纹理。结果表明,“光盘B”产生的去除率和摩擦系数始终低于“光盘A”。为了从根本上阐明产生这种差异的原因,使用激光共聚焦显微镜对焊盘的表面接触面积和形貌进行了分析。在两个圆盘都调节过的垫表面上的垫表面微观结构分析的比较表明,“盘A”产生的表面具有较小的突变率(λ)和较大的固体接触面积,这导致较高的去除率。相反,由于孔壁破裂和塌陷,“ Disc B”产生了许多大的近接触区域。

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    Mu Yan;

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  • 年度 2016
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  • 正文语种 en_US
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