Electrochemical characterization of copper in ammonia-containing slurries for chemical mechanical planarization of interconnects

摘要

The study focuses on understanding the electrochemical processes that control copper planarization. Traditional electrochemical techniques have been utilized to characterize the mechanism by which copper is removed during chemical mechanical planarization (CMP). A rotating disk electrode system was impleneted to simulate the conditions during CMP. Copper CMP in the presence of ammonia was controlled by the removal of native surface films. Electrochemical results, correlated to CMP results, can determine slurry compositions with optimum potential-pH ranges for copper planarization.