Quantum Cascade Lasers (QCL's) are unipolar semiconductor lasers offering theudpotential for low cost, high power, laser sources emitting in the mid- and far- infrared.udSingle-mode devices are required for spectroscopic and imaging applications becauseudof their narrow emission linewidth and are achieved through distributed feedbackud(DFB) designs where gratings are incorporated in or close to the active region. Thisudthesis describes design and fabrication technologies for single-mode yieldudimprovements and improved wavelength targeting of QC lasers.udMid-infrared, single-mode laser designs are developed utilising novel fabricationudprocesses and designs in the indium phosphide (InP) based material system. Lasersudwithout facet coatings, with single-mode yields up to 80% and side mode suppressionudratios (SMSR) greater than 25dB are observed. Metalised surface gratings, buriedud(overgrown) gratings and lateral gratings are defined using inductively coupledudplasma (rCP) etching to produce DFB lasers operating above room temperature forudwavelengths near to lOllm. A deep etched lateral grating quantum cascade DFB isuddemonstrated for the first time in the InP material system.udWaveguide modelling demonstrates accurate methods to predict the grating couplingudstrength of the DFB lasers with good agreement to experimental results. The emissionudwavelength (A. -IOllm) is found to be highly dependent on the laser ridge width withudthe experimental shift in wavelength found to be much greater than that predicted. Audridge width and temperature dependence on emission wavelength is utilised in anudarray device where a continuous tuning range in excess of 230nm is observed.udii udFinally, an increase in thermal conductance and a symmetric far-field profile areudobserved for lasers (A. - 4J.lm) with narrow ridge widths. The lasers were designed forudimproved heat extraction from the active region and a beam quality factor of M2 ::::: 1.udAlmost identical lateral and vertical far-field profiles with high duty cycle operation atudthermoelectric temperatures are observed for a ridge waveguide laser that isudapproximately 5 J.lm wide.
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机译:量子级联激光器(QCL)是单极性半导体激光器,具有低成本,高功率,在中红外和远红外发射的激光源的潜力。 ud光谱和成像应用需要单模设备,因为其狭窄发射线宽是通过分布式反馈 ud(DFB)设计实现的,其中将光栅合并到有源区域中或附近。该 uthethethethethethethethethethethethethethethethetheudthethethethethethethethethethethethethethethethethethethethethethetheudthethethethethethethetheuthethethethethethetheuthethethetheuthethethethetheuthethethetheuthethethetheuthethethetheuthethethethetheuthethethetheuthethethe uimpuppe / then n n n n u003e u200b u200b u200b u200b u200b u200b>本文描述了用于QC激光器单模良率的改进和波长定向的设计和制造技术。 ud基于磷化铟(InP)的新型制造/ ud工艺和设计开发了中红外单模激光器设计。材料系统。观察到激光无刻面涂层,单模产率高达80%,侧模抑制 udratios(SMSR)大于25dB。使用电感耦合等离子(rCP)蚀刻来定义金属化的表面光栅,掩埋/过长的光栅和侧向光栅,以产生DFB激光器,该DFB激光器在室温下工作,紫外波长接近10llm。在InP材料系统中首次展示了一个深蚀刻的横向光栅量子级联DFB。 udWaveguide建模演示了预测DFB激光器光栅耦合/强度的准确方法,与实验结果吻合良好。发现发射 ud波长(A.-110m)高度依赖于激光脊的宽度,发现波长的实验位移远大于预测的波长。 udarray器件利用了udridge宽度和温度对发射波长的依赖性,在其中观察到超过230nm的连续调谐范围。 udi ud最后,对于以下情况,导热系数的增加和对称的远场分布是正确的窄脊宽度的激光(A.-4J.lm)。激光器设计用于从有源区改善热量吸收,并且光束质量因子为M2 ::::: 1. ud在高温下观察到几乎相同的横向和垂直远场轮廓,并在高占空比下工作。脊形波导激光器,宽约5J.lm。
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