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Electrical properties of (Pb0.76Ca0.24)TiO3 thin films on LaNiO3 coated Si and fused quartz substrates prepared by a sol-gel process

机译:通过溶胶-凝胶法制备的LaNiO3涂覆的Si和熔融石英衬底上的(Pb0.76Ca0.24)TiO3薄膜的电性能

摘要

Ferroelectric (Pb0.76Ca0.24)TiO3 (PCT) thin films were grown on LaNiO3 (LNO) coated Si(1 1 1) and fused quartz substrates by using a sol-gel process. The highly (100)-oriented PCT films on LNO coated Si(1 1 1) substrates, and random oriented pervoskite PCT thin films on fused quartz substrates have been obtained, respectively. Atomic force microscopy (AFM) revealed that the surface morphology smooth. PCT films on LNO coated Si(1 1 1) and fused quartz substrates, the grain sizes were about 60-120 and 40-60 nm, respectively. The PCT thin films on LNO coated Si(1 1 1) and fused quartz substrates annealed at 600°C have the remanent polarization (Pr) and coercive electric field (Ec) values were 9.3 μC/cm2 and 64 kV/cm, 1.4 μC/cm2 and 28 kV/cm, respectively. At 100 kHz, the dielectric content and dielectric loss of the PCT films on LNO coated Si(111) and fused quartz substrates were 231 and 0.045, 160 and 0.061, respectively.
机译:铁电(Pb0.76Ca0.24)TiO3(PCT)薄膜通过使用溶胶-凝胶工艺在LaNiO3(LNO)涂层的Si(1 1 1)和熔融石英衬底上生长。分别获得了在LNO涂层的Si(1 1 1)衬底上的高度(100)取向的PCT膜和在熔融石英衬底上的无规取向的透钙沸石PCT薄膜。原子力显微镜(AFM)显示其表面形态光滑。在涂有LNO的Si(11 1)和熔融石英衬底上的PCT薄膜,晶粒尺寸分别约为60-120和40-60 nm。 LNO涂层的Si(1 1 1)和在600°C退火的熔融石英衬底上的PCT薄膜的剩余极化(Pr)和矫顽电场(Ec)值为9.3μC/ cm2和64 kV / cm,1.4μC / cm2和28 kV / cm。在100 kHz下,LNO涂层的Si(111)和熔融石英衬底上PCT膜的介电含量和介电损耗分别为231和0.045、160和0.061。

著录项

  • 作者

    Tang XG; Chan HLW; Ding AL;

  • 作者单位
  • 年度 2003
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
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