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Reduction of thermal conductivity in phononic nanomesh structures

机译:降低声子纳米网结构的热导率

摘要

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications1,2 and in the cooling of integrated circuits3. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity. © 2010 Macmillan Publishers Limited. All rights reserved.
机译:控制材料的热导率而不依赖于其电导率仍然是研究热电材料的研究人员的目标,该热电材料用于能源应用1,2,集成电路的冷却3。原则上,可以在半导体纳米结构中独立地优化热导率κ和电导率σ,因为不同的长度尺度与声子(携带热量)和电荷(携带电流)相关。声子在表面和界面处分散,因此κ通常随表面体积比的增加而减小。相反,σ对纳米结构尺寸的减小不太敏感,尽管在足够小的尺寸下,它将通过界面处电荷载流子的散射而降低。在这里,我们展示了一种通过形成声子纳米网膜来改变半导体薄膜的声子能带结构,从而独立控制κ的方法。这些膜以与声子平均自由程相当或比声子平均自由程更短的周期性间隔进行构图。纳米网孔结构显示出比等效制备的硅纳米线阵列低得多的导热率,即使该阵列具有明显更高的表面积与体积之比。保持大块状电导率。我们认为,这一发展是朝着降低热导率的相干机制迈出的一步。 ©2010 Macmillan Publishers Limited。版权所有。

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