Thermal conductivity manipulation in lithographically patterned single crystal silicon phononic crystal structures

摘要

The thermal conductivity of single crystal silicon was engineered using lithographically formed phononic crystals. Specifically, sub-micron periodic through-holes were patterned in 500nm-thick silicon membranes to construct phononic crystals, and through phonon scattering enhancement, heat transfer was significantly reduced. The thermal conductivity of silicon phononic crystals was measured as low as 32.6W/mK, which is a ∼75% reduction compared to bulk silicon thermal conductivity [1]. This corresponds to a 37% reduction even after taking into account the contributions of the thin-film and volume reduction effects, while the electrical conductivity was reduced only by as much as the volume reduction effect. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading toward huge performance improvements where heat management is important.