首页> 外国专利> Silicon melt convection pattern estimation method, silicon single crystal oxygen concentration estimation method, silicon single crystal manufacturing method, and silicon single crystal pulling device

Silicon melt convection pattern estimation method, silicon single crystal oxygen concentration estimation method, silicon single crystal manufacturing method, and silicon single crystal pulling device

机译:硅熔体对流图案估计方法,硅单晶氧浓度估计方法,硅单晶制造方法和硅单晶拉动装置

摘要

A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.
机译:硅熔体的对流模式估计方法包括:在旋转石英坩埚中施加0.2特斯拉或更多的水平磁场,其使用一对磁体,该磁体在石英坩埚上设置有一对磁体; 在将晶种浸入施加水平磁场的硅熔体之前; 测量位于第一假想线上的第一和第二测量点处的温度,其通过硅熔体的中心的中心,并且与水平磁场的中央磁场线不平行,如垂直从上方观察; 并估计在硅熔体中的平面中的对流流的方向与第一和第二测量点的测量温度施加水平磁场的方向垂直。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号