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Microwave Quenching in DC-Biased Coplanar Waveguide Based on ${YBa}_{2}{Cu}_{3}{O}_{7-delta}$ Thin Film

机译:基于 $ {YBA} _ {2} {CU} _ {3} {o} _ {7- {7- delta}中的微波淬火。 $ 薄膜

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摘要

n this paper, we report on the results of features in the discovered effect of a strong change in the microwave losses (quenching) in HTS-based coplanar waveguide (CPW) at certain values of the input power Pin and direct current (dc) Idc. Two waveguides were studied: CPW-150 and CPW-75, fabricated of epitaxial 150and 75-nm YBCO films. The insertion loss of CPW IL = 10 lg (Pout/Pin) was measured versus both the operating temperature and the bias dc current Idc when a fixed level of the input X-band pulsed MW signal Pin was applied. Here Pout is the power measured at the CPW output. A pulse duration Ti was 5 μs with pulse repetition period T = 40 μs. Experiments showed a noticeable difference in specific values of I* = Idc corresponding to the Pin-dependent quenching phenomenon in CPW-150 and CPW-75. With a weak input signal, the difference in behavior of CPWs is anticipated, i.e., quenching occurs at a lower current for thinner film. For Pin > 1 W the situation is opposite, i.e., quenching for CPW-150 takes place at a lower I*. This is explained by stronger microwave heating of CPW-150.
机译:本文在输入电源引脚和直流(DC)IDC的某些值下,我们报告了在基于HTS的COPLANAR波导(CPW)中的微波损耗(淬火)的强大变化的特征结果结果。研究了两个波导:CPW-150和CPW-75,由外延150和75nm YBCO膜制成。当施加输入X波段脉冲MW信号引脚的固定电平时,测量CPW IL = 10LG(POUT / PIN)的插入损耗与操作温度和偏置DC电流IDC相反。这里POUT是在CPW输出处测量的功率。脉冲持续时间Ti为5μs,脉冲重复时段t =40μs。实验表明,对应于CPW-150和CPW-75中的销依赖性猝灭现象的I * = IDC的特定值的明显差异。利用弱输入信号,预期CPWS的行为差异,即在较薄的薄膜的较低电流下发生淬火。对于PIN> 1 W,情况相反,即CPW-150的淬火在较低的I *下进行。这是通过CPW-150的更强烈的微波加热来解释这一点。

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