首页> 外文期刊>Electron Device Letters, IEEE >High Sensitivity $17~mu text{m}$ Pixel Pitch $640times 512$ Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films
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High Sensitivity $17~mu text{m}$ Pixel Pitch $640times 512$ Uncooled Infrared Focal Plane Arrays Based on Amorphous Vanadium Oxide Thin Films

机译:高灵敏度 $ 17〜mu text {m} $ 像素间距 $ 640乘以512 $ 基于非晶态氧化钒薄膜的非冷却红外焦平面阵列

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摘要

This letter presents a pixel pitch uncooled infrared focal plane arrays based on the double sacrificial layer microbolometer technology incorporating amorphous vanadium oxide thin film and frequency selective structure. The amorphous vanadium oxide thin-film features low-noise and high-thermal coefficient of resistance characteristics, which help to improve the radiometric performance of the microbolometer. By incorporating a frequency selective second platform, the responsivity of the microbolometer was improved by nearly 30% over spectra band. Noise equivalent temperature difference of less than 35 mK was obtained at 300 K ambient temperature with f/1.0 optics.
机译:这封信提出了一种基于双牺牲层微辐射热计技术的像素间距非冷却红外焦平面阵列,该技术结合了无定形氧化钒薄膜和频率选择结构。无定形氧化钒薄膜具有低噪声和高热阻系数的特性,有助于改善测微辐射热计的辐射性能。通过结合频率选择性第二平台,微辐射热计的响应度在整个光谱带上提高了近30%。使用f / 1.0光学器件在300 K环境温度下获得的噪声等效温差小于35 mK。

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